Scientists develop novel multi-color light-emitting diodes
In research published in the current issue of the scientific journal Nano Letters, the team reports on the first successful demonstration of electroluminescence from an all-inorganic, nanocrystal-based architecture where semiconductor nanocrystals are incorporated into a p-n junction formed from semiconducting GaN injection layers. The new LEDs utilize a novel type of color-selectable nanoemitters, colloidal quantum dots, and makes use of emerging GaN manufacturing technologies.
The secret to making the electrical connection to the quantum dots is the use of a technique developed at Los Alamos by Mark Hoffbauer and his team that utilizes a beam of energetic, neutral nitrogen atoms for growing GaN films. The technique, called ENABLE (for Energetic Neutral Atom Beam Lithography/Epitaxy), allows for the low-temperature encapsulation of nanocrystals in semiconducting GaN without adversely affecting their luminescence properties. By encapsulating one nanocrystal layer or two layers of nanocrystals of different sizes, the researchers have demonstrated that their LEDs can emit light of either a single color or two different colors. The two color-operation regime is an important step toward creating devices that produce white light.
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