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TrimethylgalliumTrimethylgallium (abbr: TMG), Ga(CH3)3, (CAS #: 1445-79-0) is the preferred metalorganic source of Gallium for Metalorganic vapour phase epitaxy (MOVPE) of gallium-containing compound semiconductors, such as GaAs, GaN, GaP, GaSb, GaInAs, InGaN, AlGaInP, GaInP, AlInGaNP etc. TMG is a clear, colorless liquid, with boiling point 55.7 ºC and melting point (or freezing point) -15 ºC. TMG is known to be pyrophoric, i.e. it ignites sponteneously upon contact with air [1]. Even the hydrocarbon solutions of TMG, when sufficiently saturated, are known to catch fire on exposure to air. TMG is known to react violently with water and other compounds that are capable of providing labile active hydrogen (i.e. proton). Therefore, TMG needs to be handled with necessary care and caution, e.g. stored in a cool, dry place at 0-25 ºC, under inert atmosphere, and ensuring that storage temperatures would not exceed 40 ºC to avoid deterioration. References and External Links
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Categories: Semiconductors | Compound semiconductors | Thin film deposition | Gallium compounds |
This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "Trimethylgallium". A list of authors is available in Wikipedia. |