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John Battiscombe Gunn

John Battiscombe (J.B.) Gunn is an Egyptian-born US/British physicist born in 1928.

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While working for IBM, in 1963 he invented the Gunn diode based upon the Cyril Hilsum-Ridley-Watkins effect. He is a member of the National Academy of Engineering, and received the 1969 IEEE Morris N. Liebmann Memorial Award.

Selected works

J. B. Gunn, "Microwave Oscillation of Current in III-V Semiconductors", Solid State Communications, 1 88 (1963).

References

The Gunn Effect
Encyclopedia Britannica: the Gunn Effect
National Academy of Engineering entry

Category: Semiconductor physicists

This article is licensed under the GNU Free Documentation License. It uses material from the Wikipedia article "John_Battiscombe_Gunn". A list of authors is available in Wikipedia.

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