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Boron arsenide

Boron arsenide

Identifiers
CAS number	12005-69-5
Properties
Molecular formula	BAs
Molar mass	85.733 g/mol
Density	5.22 g/cm³, solid
Melting point	2027 °C
Boiling point	°C
Solubility in water	Insoluble
Thermochemistry
Std enthalpy of formation Δ_fH^o₂₉₈	−0 kJ/mol
Standard molar entropy S^o₂₉₈	J.K⁻¹.mol⁻¹
Hazards
EU classification	Dangerous for the environment (N)
Related Compounds
Other anions	Boron nitride Boron phosphide Boron antimonide
Other cations	Aluminium arsenide Gallium arsenide Indium arsenide
Except where noted otherwise, data are given for materials in their standard state (at 25 °C, 100 kPa) Infobox disclaimer and references

Boron arsenide is a chemical compound of boron and arsenic. It is a cubic (sphalerite) semiconductor with a lattice constant of 0.4777 nm and an indirect bandgap of roughly 1.5 eV. It can be alloyed with gallium arsenide.

Additional recommended knowledge

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Boron arsenide also occurs as an icosahedral boride, B₁₂As₂. http://spectra.phy.bris.ac.uk/research_semiconductor.asp This form can be grown on substrates such as silicon carbide.

Applications

Solar cells can be fabricated from boron arsenide.

References

The references in this article would be clearer with a different or consistent style of citation, footnoting, or external linking.

Boron Chemistry at the Millennium, Editor: R.B. King, Elsevier Science & Technology (1999) ISBN 978-0-444-72006-1
Ordered Boron Arsenide, P. D. Ownby, Journal of the American Ceramic Society, vol. 58, 7-8, pp 359-360, 1975.
BAs and boride III-V alloys, Gus L. W. Hart and Alex Zunger, Phys. Rev. B vol. 62, 13522 (2000) http://arxiv.org/abs/cond-mat/0009063

Categories: Boron compounds | Arsenides | III-V compounds | Semiconductor materials